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SPIE Proceedings [SPIE SPIE Nanoscience + Engineering - San Diego, California, United States (Sunday 28 August 2016)] UV and Higher Energy Photonics: From Materials to Applications - Development of AlGaN-based deep-ultraviolet (DUV) LEDs focusing on the fluorine resin encapsulation and the prospect of the practical applications

Lérondel, Gilles, Kawata, Satoshi, Cho, Yong-Hoon, Hirano, Akira, Nagasawa, Yosuke, Ippommatsu, Masamichi, Aosaki, Ko, Honda, Yoshio, Amano, Hiroshi, Akasaki, Isamu

Année:

2016

Langue:

english

Fichier:

PDF, 792 KB

english, 2016

X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN

Michinobu Tsuda, Hiroko Furukawa, Akira Honshio, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

physica status solidi (b)

Année:

2006

Langue:

english

Fichier:

PDF, 311 KB

english, 2006

Nobel Lecture: Fascinated journeys into blue light

Akasaki, Isamu

Journal:

Review of Modern Physics

Année:

2015

Langue:

english

Fichier:

PDF, 2.65 MB

english, 2015

Study on the Main-Chain Structure of Amorphous Fluorine Resins for Encapsulating AlGaN-Based DUV-LEDs

Yamada, Kiho, Nagasawa, Yosuke, Nagai, Shoko, Hirano, Akira, Ippommatsu, Masamichi, Aosaki, Ko, Honda, Yoshio, Amano, Hiroshi, Akasaki, Isamu

Journal:

physica status solidi (a)

Année:

2018

Langue:

english

Fichier:

PDF, 2.05 MB

english, 2018

GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors

Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

Journal:

Reports on Progress in Physics

Année:

2018

Langue:

english

Fichier:

PDF, 868 KB

english, 2018

Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible

Tanaka, Daiki, Kurokawa, Hiroaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu

Journal:

Materials Science Forum

Année:

2019

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2019

MOVPE growth of GaN on a misoriented sapphire substrate

Kazumasa Hiramatsu, Hiroshi Amano, Isamu Akasaki, Hisaki Kato, Norikatsu Koide, Katsuhide Manabe

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 405 KB

english, 1991

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

Hiroshi Amano, Isamu Akasaki, Kazumasa Hiramatsu, Norikatsu Koide, Nobuhiko Sawaki

Journal:

Thin Solid Films

Année:

1988

Langue:

english

Fichier:

PDF, 1.10 MB

english, 1988

Epitaxial lateral overgrowth of AlxGa1−xN (x>0.2) on sapphire and its application to UV-B-light-emitting devices

Kazuyoshi Iida, Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Akira Bandoh

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 218 KB

english, 2007

Key inventions in the history of nitride-based blue LED and LD

Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 533 KB

english, 2007

Relaxation and recovery processes of AlxGa1−xN grown on AlN underlying layer

Toshiaki Asai, Kensuke Nagata, Toshiaki Mori, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 227 KB

english, 2009

High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient

Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Journal:

physica status solidi (a)

Année:

2010

Langue:

english

Fichier:

PDF, 253 KB

english, 2010

Development of high efficiency 255–355 nm AlGaN-based light-emitting diodes

Cyril Pernot, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Myunghee Kim, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano

Journal:

physica status solidi (a)

Année:

2011

Langue:

english

Fichier:

PDF, 228 KB

english, 2011

Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer

Kenichiro Takeda, Kengo Nagata, Tomoki Ichikawa, Kentaro Nonaka, Yuji Ogiso, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Harumasa Yoshida, Masa

Journal:

physica status solidi (c)

Année:

2011

Langue:

english

Fichier:

PDF, 93 KB

english, 2011

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide, Kazumasa Hiramatsu, Nobuhiko Sawaki

Journal:

Journal of Crystal Growth

Année:

1989

Langue:

english

Fichier:

PDF, 887 KB

english, 1989

High On/Off Ratio in Enhancement-Mode Al x Ga 1- x N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

Fujii, Takahiro, Tsuyukuchi, Norio, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

Journal:

Japanese Journal of Applied Physics

Année:

2006

Langue:

english

Fichier:

PDF, 120 KB

english, 2006

White light-emitting diode based on fluorescent SiC

Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki, Rositza Yakimova, Mikael Syväjärvi

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 653 KB

english, 2012

Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

Akasaki, Isamu, Amano, Hiroshi

Journal:

Japanese Journal of Applied Physics

Année:

2006

Langue:

english

Fichier:

PDF, 627 KB

english, 2006

Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals

Detchprohm, Theeradetch, Yano, Masahiro, Sano, Shigekazu, Nakamura, Ryo, Mochiduki, Shingo, Nakamura, Tetsuya, Amano, Hiroshi, Akasaki, Isamu

Journal:

Japanese Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 621 KB

english, 2001

Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al 0.05 Ga 0.95 N

Sugiyama, Toru, Iida, Daisuke, Yasuda, Toshiki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Journal:

Applied Physics Express

Année:

2013

Langue:

english

Fichier:

PDF, 2.00 MB

english, 2013

Indium–Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes

Takehara, Kosuke, Takeda, Kenichiro, Ito, Shun, Aoshima, Hiroki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi

Journal:

Japanese Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 4.17 MB

english, 2012

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

Imura, Masataka, Nakano, Kiyotaka, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh,

Journal:

Japanese Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 269 KB

english, 2007

Electron Mobility and Drag Effect in p-Type Silicon

Morohashi, Makoto, Sawaki, Nobuhiko, Akasaki, Isamu

Journal:

Japanese Journal of Applied Physics

Année:

1985

Langue:

english

Fichier:

PDF, 678 KB

english, 1985

Erratum: “Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode”

Akasaki, Isamu, Amano, Hiroshi

Journal:

Japanese Journal of Applied Physics

Année:

2008

Langue:

english

Fichier:

PDF, 108 KB

english, 2008

SPIE Proceedings [SPIE Integrated Optoelectronics Devices - San Jose, CA (Saturday 25 January 2003)] Physics and Simulation of Optoelectronic Devices XI - Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display

Amano, Hiroshi, Osinski, Marek, Amano, Hiroshi, Iwaya, Motoaki, Nitta, Shugo, Blood, Peter, Tomida, Y., Iida, K., Kawashima, T., Fukui, S., Kamiyama, Satoshi, Akasaki, Isamu, Kinoshita, H., Matsuda, T

Année:

2003

Langue:

english

Fichier:

PDF, 357 KB

english, 2003

Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction

Mori, Kazuki, Takeda, Kunihiro, Kusafuka, Toshiki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi

Journal:

Japanese Journal of Applied Physics

Année:

2016

Langue:

english

Fichier:

PDF, 1.87 MB

english, 2016

Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiN x intermediate layer

Nagata, Noriaki, Senga, Takashi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Journal:

Physica status solidi

Année:

2016

Langue:

english

Fichier:

PDF, 467 KB

english, 2016

Retraction: “Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer”

Hayashi, Takafumi, Nagata, Noriaki, Senga, Takashi, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Matsumoto, Takahiro

Journal:

Applied Physics Express

Année:

2016

Langue:

english

Fichier:

PDF, 178 KB

english, 2016

High-performance solar-blind Al 0.6 Ga 0.4 N/Al 0.5 Ga 0.5 N MSM type photodetector

Yoshikawa, Akira, Ushida, Saki, Nagase, Kazuhiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Journal:

Applied Physics Letters

Année:

2017

Langue:

english

Fichier:

PDF, 1.13 MB

english, 2017

Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing

Hakamata, Junya, Kawase, Yuta, Dong, Lin, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Akasaki, Isamu

Journal:

physica status solidi (b)

Année:

2018

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2018

Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes

Kojima, Hisanori, Ogasawara, Takuma, Kim, Myunghee, Saito, Yoshiki, Iida, Kazuyoshi, Koide, Norikatsu, Takeuchi, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu

Journal:

Japanese Journal of Applied Physics

Année:

2019

Langue:

english

Fichier:

PDF, 1.79 MB

english, 2019

Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis

Han, Dong-Pyo, Lee, Gyeong Won, Min, Sangjin, Shin, Dong-Soo, Shim, Jong-In, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

Journal:

Scientific Reports

Année:

2020

Fichier:

PDF, 2.70 MB

2020

Characterization of the crystalline quality on GaN on sapphire and ternary alloys

Hiroshi Amano, Tetsuya Takeuchi, Shigeo Yamaguchi, Christian Wetzel, Isamu Akasaki

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Année:

1998

Langue:

english

Fichier:

PDF, 4.46 MB

english, 1998

The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility

Shigeyasu Tanaka, Kazumasa Hiramatsu, Yoshio Habu, Nobuhiko Sawaki, Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

1986

Langue:

english

Fichier:

PDF, 1.23 MB

english, 1986

Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers

Shigeyasu Tanaka, Kazumasa Hiramatsu, Yoshio Habu, Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 625 KB

english, 1988

Electron microscope study of modulated structures and heterointerfaces in LPE-grown GaInAsP layers lattice-matched on GaAs

Noriyuki Kuwano, Kohji Fukuda, Kensuke Oki, Shigeyasu Tanaka, Kazumasa Hiramatsu, Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

1989

Langue:

english

Fichier:

PDF, 1.07 MB

english, 1989

LPE growth of InGaP/InGaAsP multiple thin layers on (111)A GaAs substrates

Shigeyasu Tanaka, Hiroyuki Takamatsu, Kazumasa Hiramatsu, Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

1989

Langue:

english

Fichier:

PDF, 639 KB

english, 1989

Preparation of AlxGa1-xN/GaN heterostructure by MOVPE

Kenji Ito, Kazumasa Hiramatsu, Hiroshi Amano, Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

1990

Langue:

english

Fichier:

PDF, 851 KB

english, 1990

Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3

Hiramatsu, Kazumasa, Amano, Hiroshi, Akasaki, Isamu

Journal:

Journal of Crystal Growth

Année:

1990

Langue:

english

Fichier:

PDF, 571 KB

english, 1990

Conference chairperson's preface

Akasaki Isamu

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 123 KB

english, 1991

Growth of InGaP epitaxial layers by liquid phase electro-epitaxy

Masashi Yanagase, Shigeyasu Tanaka, Kazumasa Hiramatsu, Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 416 KB

english, 1991

Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN

Noriyuki Kuwano, Tadayoshi Shiraishi, Akihiro Koga, Kensuke Oki, Kazumasa Hiramatsu, Hiroshi Amano, Kenji Itoh, Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 711 KB

english, 1991

Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

Hiroshi Murakami, Tsunemori Asahi, Hiroshi Amano, Kazumasa Hiramatsu, Nobuhiko Sawaki, Isamu Akasaki

Journal:

Journal of Crystal Growth

Année:

1991

Langue:

english

Fichier:

PDF, 444 KB

english, 1991

Electron beam effects on blue luminescence of zinc-doped GaN

Hiroshi Amano, Isamu Akasaki, Takahiro Kozawa, Kazumasa Hiramatsu, Nobuhiko Sawaki, Kousuke Ikeda, Yoshikazu Ishii

Journal:

Journal of Luminescence

Année:

1988

Langue:

english

Fichier:

PDF, 126 KB

english, 1988

Stimulated emission in MOVPE-grown GaN film

Hiroshi Amano, Tsunemori Asahi, Masahiro Kito, Isamu Akasaki

Journal:

Journal of Luminescence

Année:

1991

Langue:

english

Fichier:

PDF, 268 KB

english, 1991

Effect of Si on photoluminescence of GaN

Mohammad Rezaul Huque Khan, Yoshio Ohshita, Nobuhiko Sawaki, Isamu Akasaki

Journal:

Solid State Communications

Année:

1986

Langue:

english

Fichier:

PDF, 358 KB

english, 1986

Behaviour of Zn as dopant in the photoluminescence of AlxGa1-xN

Mohammad Rezaul Huque Khan, Yasuo Koide, Nobuhiko Sawaki, Isamu Akasaki

Journal:

Solid State Communications

Année:

1986

Langue:

english

Fichier:

PDF, 313 KB

english, 1986

Raman scattering in AlxGa1−xN alloys

Kouji Hayashi, Kenji Itoh, Nobuhiko Sawaki, Isamu Akasaki

Journal:

Solid State Communications

Année:

1991

Langue:

english

Fichier:

PDF, 274 KB

english, 1991

Scattering and real space transfer in multi-quantum well structures

Nobuhiko Sawaki, Isamu Akasaki

Journal:

Physica B+C

Année:

1985

Langue:

english

Fichier:

PDF, 262 KB

english, 1985

Electric properties of GaN : Zn MIS-type light emitting diode

Md.Rezaul Huque Khan, Isamu Akasaki, Hiroshi Amano, Nobuo Okazaki, Katsuhide Manabe

Journal:

Physica B: Condensed Matter

Année:

1993

Langue:

english

Fichier:

PDF, 375 KB

english, 1993